Abstract

Carbon nitride thin films, with N-concentration about 41% have been synthesized by pulsed laser ablation of graphite under a low-energy nitrogen ion beam bombardment. Electron diffraction and X-ray photoelectron spectra measurements have shown the existence of polycrystallite covalent beta-C₃N₄ structure in the films. During the syntheses, YAG laser ablation was used with different laser wavelengths: 355, 532 nm and 1,06µm individually. The analyses of the optical emission spectra (OES) of the ablated plasma indicated that the use of 532 nm laser is more proposed for the purpose of synthesis of good carbon nitride films.

© 1995 Optical Society of America