µ-Transfer printing of GaSb-based gain elements for integrated external cavity lasers at 2 µm range

Heidi Tuorila; Jukka Viheriälä; Yeasir Arafat; Eero Koivusalo; Joonas Hilska; Fatih Bilge Atar; Fatima Gunning; Brian Corbett; Mircea Guina

doi:10.1364/CLEO_SI.2023.STu4P.7

CLEO 2023
Technical Digest Series (Optica Publishing Group, 2023),
paper STu4P.7
•https://doi.org/10.1364/CLEO_SI.2023.STu4P.7

µ-Transfer printing of GaSb-based gain elements for integrated external cavity lasers at 2 µm range

Heidi Tuorila, Jukka Viheriälä, Yeasir Arafat, Eero Koivusalo, Joonas Hilska, Fatih Bilge Atar, Fatima Gunning, Brian Corbett, and Mircea Guina

CLEO: Science and Innovations 2023

San Jose, CA United States
7–12 May 2023
ISBN: 978-1-957171-25-8

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Integrated Lasers-II (STu4P)

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H. Tuorila, J. Viheriälä, Y. Arafat, E. Koivusalo, J. Hilska, F. B. Atar, F. Gunning, B. Corbett, and M. Guina, "µ-Transfer printing of GaSb-based gain elements for integrated external cavity lasers at 2 µm range," in CLEO 2023, Technical Digest Series (Optica Publishing Group, 2023), paper STu4P.7.

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Abstract

Micro transfer printing of GaSb-based gain elements transferred to silicon photonics platform is reported for the first time. Using a distributed Bragg reflector fabricated utilizing silicon-on-insulator technology and the GaSb integrated gain chip, a single frequency external cavity laser emitting at around 1.96 µm is demonstrated.

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