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Sub-wavelength InP lasers selectively grown on SOI

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Abstract

We report sub-wavelength InP lasers selectively grown on (001) silicon-on-insulator (SOI) wafers. Detailed characterizations were performed to study the effect of different laser cavities. The sub-wavelength laser features a low lasing threshold of 120 μJ/cm2 and a spontaneous emission factor of around 0.7.

© 2023 The Author(s)

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