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Be-doping assessment in Self-Catalyzed MBE Grown GaAs Nanowires

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Abstract

We report on the Be-dopant assessment in Ga-assisted molecular beam epitaxially grown nanowires using conductive-atomic force microscopy, X-ray photoelectron spectroscopy, and ultraviolet photoelectron spectroscopy.

© 2021 The Author(s)

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More Like This
Photochemical Deposition of Sn for In-Situ Selected Area Doping of MBE GaAs (001)

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WC11 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1985

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CTuCC3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008

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T.B. Norris, W. Sha, WJ. Schaff, and X.J. Song
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