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High Q Microresonators Based on Epitaxial GaN Film

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Abstract

High-Q GaN microring resonators are fabricated with optimized CH/BCF/Ar inductively coupled plasma (ICP) dry etching process. The GaN microresonator exhibits an intrinsic Q factor exceeding 2* 105, which is the highest Q reported so far.

© 2020 The Author(s)

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