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Conferences > CLEO_SI > 2018 > STh1A > STh1A.8

Interface Passivation for Realizing High Efficiency Direct Band Gap Emission from Ge MOS Tunneling Diode

Min Xie and Yi Zhao

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Abstract

We demonstrated room temperature Ge surface-emitting diode with 1.5-1.6 um strong infrared emission using a metal/graphene/high-k/interface layer (IL)/n-Ge MOS tunneling structure, without introducing strain or extra-doping.

© 2018 The Author(s)

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