Gires-Tournois Interferometers with Sidewall Bragg Gratings in SOI

Paul D. Morin; Lawrence R. Chen

doi:10.1364/CLEO_SI.2016.STh4E.8

Conference on Lasers and Electro-Optics
OSA Technical Digest (2016) (Optica Publishing Group, 2016),
paper STh4E.8
•https://doi.org/10.1364/CLEO_SI.2016.STh4E.8

Gires-Tournois Interferometers with Sidewall Bragg Gratings in SOI

Paul D. Morin and Lawrence R. Chen

CLEO: Science and Innovations 2016

San Jose, California United States
5–10 June 2016
ISBN: 978-1-943580-11-8

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Silicon Photonics (STh4E)

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P. D. Morin and L. R. Chen, "Gires-Tournois Interferometers with Sidewall Bragg Gratings in SOI," in Conference on Lasers and Electro-Optics, OSA Technical Digest (2016) (Optica Publishing Group, 2016), paper STh4E.8.

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Abstract

We demonstrate integrated silicon-on-insulator Gires-Tournois interferometers based on sidewall Bragg gratings. The GTIs have a channel spacing of 50 GHz, extinction ratios up to 6 dB, and can be easily integrated into silicon photonic circuits.

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