Abstract
The application of a specific metal organice vapour phase epitaxy (MOVPE) growth process for (GaIn)As-based VECSEL using thermally more efficiently decomposing MO-group-V-sources results in an extended wavelength range and facilitates the necessary strain compensation of the highly compressive-strained (GaIn)As-quantum well layers by tensile-strained Ga(PAs) barrier layers. Applying a closed-loop-design concept of detailed microscopic modelling [1] and experimental realization as well as laser characterization allows for an efficient optimization of these complex laser devices.
© 2014 Optical Society of America
PDF ArticleMore Like This
Alexander R. Albrecht, Denis V. Seletskiy, Jeffrey G. Cederberg, and Mansoor Sheik-Bahae
CW1G.5 CLEO: Science and Innovations (CLEO:S&I) 2013
Mahmoud Gaafar, Christoph Möller, Matthias Wichmann, Bernd Heinen, Bernardette Kunert, Arash Rahimi-Iman, Wolfgang Stolz, and Martin Koch
JTu4A.121 CLEO: Applications and Technology (CLEO:A&T) 2014
Stefan Illek, Peter Brick, Wolfgang Diehl, Michael Furitsch, Hans Lindberg, and Ines Pietzonka
CWD2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008