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Topological Lasers with Epitaxially Grown InGaAs Nanowires on a SOI Substrate

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Abstract

We report a semiconductor laser based on optical cavities formed by topologically distinct honeycomb lattice photonic crystals. Topological lasers, fabricated on SOI wafers by using a selective area epitaxy method, can have edge modes and bulk modes under optical pumping.

© 2022 The Author(s)

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