Abstract

The high-throughput modularisation of integrated photonics will play a major role in the development of the large-scale systems essential for useful applications. Each material platform offers distinct advantages, dependent on the functionality required. To move optical signals between disparate platforms, low-loss fibre-chip interfaces will be essential. With its resonant nonlinear refractive index and low nonlinear absorption, silicon-on-insulator waveguides operating at 2.1 µm have been shown to be a promising candidate for pair-photon resource state generation in quantum photonics via spontaneous four-wave mixing (FWM) [1], and could also be a route to enable high-efficiency integrated frequency switches via Bragg scattering FWM [2]. Here, using adiabatic fiber-chip couplers that were post-processed from a commercial fabrication process, we characterise a potential 2.1 µm pair-photon source via stimulated four-wave mixing (StFWM) in a phase-matched, air-clad 220 nm thick silicon waveguide.

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