Abstract

Electric-field-driven ultrafast charge carrier dynamics in semiconductors and other materials is of importance for novel high-frequency solid-state devices and other applications. Table-top sources of intense singe-cycle THz pulses [1] provide an ideal tool to study electron dynamics in the absence of band-to-band excitation, for example, by THz pump—THz probe spectroscopy [2,3]. THz pump-probe measurements revealed the dynamics of carrier cooling in GaAs [2], of impact ionisation in InSb [2], and of intravalley and intervalley scattering of hot free electrons in the semiconductors Ge, Si and GaAs [3].

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