Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Europe (CLEO/Europe 2023) and European Quantum Electronics Conference (EQEC 2023)
  • Technical Digest Series (Optica Publishing Group, 2023),
  • paper cb_3_3

Quasi PT-symmetric design for single-mode high-power edge-emitting semiconductor lasers

Not Accessible

Your library or personal account may give you access

Abstract

Large-area lasers are utilized for generating higher optical powers. However, enlarged cross-sections for increased current injection lead to the introduction of high-order modes, decreased beam qualities, and limited applicability. Available mode filtering approaches such as adiabatic amplifiers, tapered designs, laterally inhomogeneous structures, and refractive index modulations mostly adversely affect the fundamental mode and require added steps and complexities in the fabrication [1]. As a novel concept in quantum mechanics, PT-symmetric (PTS) designs have found their only experimental validation in optical devices. They have shown capabilities in high-order mode filtering by inducing selective modal losses on the coupled higher-order mode from a pumped main potential to a lossy partner potential. Again, these systems require precise adjustments to avoid affecting the fundamental mode [2]. Here, we introduce the quasi-PTS concept, with reduced operational sensitivity, to selectively force loss on the high-order mode while keeping the fundamental mode intact. This design is based on adjusting the width of the passive partner to support the higher-order mode of the main potential as its first mode. We present experimental evidence for an electrically pumped, large-area edge-emitting laser with high-power emission above 400mW and high beam qualities below 1.2. Beyond prior proof-of-concept investigations, this study provides the first unambiguous demonstration of PTS applicability in designing laser geometries with industrial output power levels and emission characteristics.

© 2023 IEEE

PDF Article
More Like This
PT-symmetric double ridge semiconductor lasers emitting at 980 nm

Ting Fu, Yufei Wang, Xuyan Zhou, Fangling Du, Jian Fan, Xueyou Wang, Jingxuan Chen, Aiyi Qi, and Wanhua Zheng
JW1A.161 CLEO: Applications and Technology (CLEO:A&T) 2021

High power single mode triple-ridge waveguide semiconductor laser

Xiaolei Zhao, Siwei Zeng, Yeyu Zhu, Ying Wu, and Lin Zhu
JTh2D.4 CLEO: Applications and Technology (CLEO:A&T) 2020

Mode selectivity in PT symmetric lasers

M.H. Teimourpour and R. El-Ganainy
JW3A.64 Frontiers in Optics (FiO) 2017

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.