Abstract
We measure laser-induced microscale carrier excitation inside GaAs by monitoring the fluorescence. Results reveal the requirements existing on the pulse energy, duration, and focusing numerical aperture to obtain modification deep inside GaAs.
© 2021 IEEE
PDF ArticleMore Like This
Onur Tokel, Ahmet Turnali, Petro Deminskyi, Serim Ilday, and F. Ömer Ilday
W1E.2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2018
Ihor Pavlov, Onur Tokel, Svitlana Pavlova, Viktor Kadan, Ghaith Makey, Ahmet Turnali, Tahir Colakoglu, Ozgun Yavuz, and Fatih Omer Ilday
CM_4_2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2017
Ludovic Rapp, Eugene G. Gamaly, Remo Guist, Luca Furfaro, Pierre-Ambroise Lacourt, John M. Dudley, Saulius Juodkazis, Francois Courvoisier, and Andrei V. Rode
BT3B.4 Bragg Gratings, Photosensitivity, and Poling in Glass Waveguides (BGPP) 2016