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Conventional hydrogenated silicon nitride (SiN:H) waveguides prepared by PECVD technique at low temperature usually exhibits high optical loss induced by the N-H bond absorption (>1 dB/cm) around C-band telecom wavelengths, which limits its applications in nonlinear integrated photonics. By using hydrogen-free precursors, deuterated silicon nitride (SiN:D) based on PECVD platform provides an effective solution and has been confirmed with promising material performance[1-3].
© 2019 IEEE
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