Abstract

Quantum dot (QD) laser devices are promising sources for a variety of applications, including mode-locked lasers [1], single-photon sources [2], and computer memory [3]. They have also been of interest for their theoretically predicted high modulation capabilities, however these have yet to be realized. In contrast to quantum wells and bulk heterostructures, their completely discretized energy spectrum gives rise to their various special properties, i.e. low threshold currents for lasing, high temperature stability and low linewidth [4]. However, this also leads to their most prominent drawback; the carrier redistribution between these discrete levels is slow, when compared with quantum wells (QW). Thus, modulation capabilities are inhibited and despite many efforts, QD systems currently cannot compete with QW based devices.

© 2015 IEEE