Abstract

High-power, waveguide-based microchip laser devices designed for integrated optical circuits can satisfy demanding specifications relating to applications in communications, data processing, biomedical analysis, imaging and environmental diagnostics. In recent years, a new technology that uses ultrashort laser pulses has been demonstrated for the writing of three-dimensional photonic structures in dielectric media through modification of the refractive index [1]. Specifically, this method has been applied to the fabrication of active waveguides in Er:Yb-doped glass, Ti:Sapphire crystal and Nd:YAG ceramic media. Monoclinic potassium double tungstates [KGd(WO₄)₂ and KY(WO₄)₂] doped with different rare earth ions have been recognized as outstanding gain media for high-power and compact laser sources. Additionally, such materials are characterized by relatively high linear and nonlinear refractive indices together with efficient Raman conversion. Here, we report, for the first time to our knowledge, a channel waveguide laser fabricated in a Yb³⁺-doped KGd(WO₄)₂(Yb:KGdW) crystal using an ultrashort pulse laser inscription technique.

© 2009 IEEE