Abstract

There has recently been an increasing interest in polymer and organic semiconductor materials for active optoelectronics device manufacture. Organic materials have been shown to offer several advantages including mechanical flexibility, large wavelength shifts and a wide tuning range for semiconductor laser applications. It is therefore desirable to design device configurations for organic lasers that exploit the unique properties of the materials. The fabrication technique known as imprinting [1] has attracted considerable interest as a means of conveniently producing distributed feed-back (DFB) resonant cavities using surface relief gratings in a variety of configurations. One proposed configuration is that of a Circular Grating DFB (CG-DFB). This compact design offers full three dimensional confinement of the lasing mode to the chosen active region. The present paper details a gain threshold analysis of an organic 632nm CG-DFB laser using the coupled mode analysis in [2] as a basis for the calculation. The results of the analysis for a uniformly pumped DFB structure having a 0.2μm first-order sinusoidal grating with an outer radius of 50μm and an inner radius of 25μm are shown in fig 1, where it is seen that threshold gain values as low as 100cm^-1 can be obtained. Further results of this and other structures will be presented and discussed at the conference.

© 2000 IEEE