Abstract

Narrow ridge GaInSbAs/GaAlSbAs strained quantum well lasers have been febricated by molecular beam epitaxy. At room temperature (RT) the lasers had threshold currents in the range of 20-40 mA and emitted up to 40 mW/facet of optical power at 2.25-2.28 µm. They operated in the fundamental spatial mode and exhibited single frequency emission with the side longitudinal mode suppression reaching 20 dB in a large range of currents. The lasers operated in continuous wave (cw) regime up to 130°C. We were able to tune the emission wavelength in a very large range of 0.18 µm using a resistance heater instead of a Peltier cooler (Fig. 1).

© 2000 IEEE