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Optica Publishing Group
  • Conference on Lasers and Electro-Optics Europe
  • Technical Digest Series (Optica Publishing Group, 2000),
  • paper CTuK33

High Power Diode-Pumped Nd.-Host Lasers Passively Q-Switched at 1.3 µm

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Abstract

V:YAG crystals have been recently proposed as solid-state saturable absorbers for Q-switched neodymium lasers at 1-1.3 µm [1,2]. V:YAG exhibits a relaxation time as short as few ns with respect to the 3-µs of Cr:YAG, as well as a reduced excited state absorption. High power diode-pumped Nd:lasers operating at 1-µm and passively Q-switched by V:YAG crystals were described in Ref. 3. We report what we believe to be the first investigations on high-power passively Q-switched Nd:YAG, Nd:YAP and Nd:YVO4 lasers operated at 1.3 µm. These are known as the most efficient and readily available laser media at this wavelength. The pump source was a 12-W fiber-coupled diode array emitting near 810 nm.

© 2000 IEEE

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