Abstract

High power broad area (BA) laser diodes emitting at a wavelength of about 800nm are key elements for laser technologies in pumping of solid state lasers and medical applications. For most applications, it is useful to diminish the vertical beam divergence In this paper, this is realised by increasing the vertical spot size at the laser facet by widening the large optical cavity (LOG) structure for the AlGaAs/GaAsP - BA laser diodes. The beam quality in vertical and lateral direction as well as the high power and aging behaviour are discussed, which are essential for laser applications.

© 2000 IEEE