Abstract
Three different new Yb3+ doped crystalline silicates hosts: Yb:YSO (Y2SiO5); Yb:CAS (Ca2Al2SiO7) and Yb:SYS (Sr4Y(SiO4)O) have been grown by the Czochralski process The melting point vary in the range 1580°C for the Yb:CAS until ≈ 2000°C for the Yb:YSO host First, low doping concentration is used to determine the usual Yb3+ spectroscopic and laser parameters: absorption and emission cross sections, lifetime values and gain curves. The crystal field splitting of the fundamental 2F7/2 energy level is determined through the measurements of low temperature absorption and emission spectra βmin values, which represent the minimal population inversion required for the laser oscillation, are very low for the Yb:CAS and Yb:YSO materials Second, for laser investigation, the Yb3+ concentration is chosen around 5% and 1 mm thick laser rods are cut and laser quality polished. For the preliminary experiments, the laser rods were not AR coated.
© 2000 IEEE
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