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Conferences > CLEO_Europe > 1998 > CTuK > CTuK3

V3+:YAG - A New Infrared Passive Q-Switch

A M Malyarevich, I A Denisov, K V Yumashev, V P Mikhailov, R S Conroy, and B D Sinclair

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Abstract

Passive Q-switching has provided a very successful, compact, means of generating short, high intensity pulses. Many bulk passive Q-switches use the Cr4+ ion, in particular Cr:YAG, which has yielded pulses of 600ps duration in combination with Nd:YAG, in a microchip geometry [1]. More recently the use of quantum wells in semiconductor devices (SESAMs) has produced ultrashort pulses: 230ps at 1342nm and 56ps at 1064nm [2]. However these SESAM devices appear to be limited to relatively low pulse energies.

© 1998 IEEE

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