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Sub-picosecond gain and amplified spontaneous emission spectroscopy on semiconductor optical amplifiers.

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Abstract

A full understanding of the response of the carrier distribution to the strong internal optical fields in semiconductor lasers and in semiconductor optical amplifiers (SOA’s) is necessary to exploit these components for all optical data processing to their greatest extent. Especially in the field of wavelength conversion, based on cross gain modulation (XGM) in an SOA, it would push the limits of modulation speed of these devices.

© 1998 IEEE

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