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Conferences > CLEO_Europe > 1998 > CMC > CMC3

Performance of a diode-pumped 1.4 W Tm:GdVO4 microchip laser at 1.9μm.

Chr. Wyss, W. Lüthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, and I. A. Shcherbakov

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Abstract

GdVO4 as a host for Thulium has several advantages for diode pumping in comparison with YAG. The absorption cross section of Thulium in GdVO4 is considerably stronger and broader than in YAG and the spectrum is shifted closer to the emission wavelength of commercially available AlGaAs laser diodes. The broad emission spectrum (1.9 μm - 2.1 μm) allows for tuning the laser wavelength. Furthermore, the large thermal conductivity of GdVO4 (10 W/mK) is very favourable for efficient cooling of the crystal.

© 1998 IEEE

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