Abstract

This paper presents a new experimental result about the influence of internally circulating modes(ICM) on the external quantum efficiency of InGaAs/GaAs/AlGaAs based single quantum well laser diodes with the wavelength of 980nm. The influence of ICM on laser performance is much stronger in the case of quantum well structures than in the case of the bulk active layer structures since the super thin active layer(thickness~6nm) allows substantially less absorption in the light travelling path in resonator. This latent ICM in optical resonator obviously deteriorates the external quantum efficiency of the laser emission from front and rear mirror facets.

© 1996 IEEE