Abstract
Layers of Tr:Sapphire with thicknesses between 1 and 82 microns have been produced by the Pulsed Laser Deposition (PLD) of a bulk Ti:Sapphire target (0.1 wt. %) onto nominally pure sapphire substrates of (0001) orientation. These were grown in ambient oxygen at around 10-4mbar using a KrF excimer laser supplying 500mJ per pulse, resulting in an energy density of 3-4 J/cm2.
© 1996 IEEE
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