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Electrooptic effect in CdHgTe heterostructures in the 1.5 µm range

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Abstract

The increasing volume of dala transfer through optical telecommunication networks is demanding lugli efficiency optical switches (e.g. photorefractive devices) in the wavelength range of 1.5µm. Narrow gap semiconductors like cadmium mercury telluride (CMT) are natural candidates for realizing spatial holographic interconnect of optical fibers at the telecommunication wavelengths thanks to their possibility to cover the spectral range of interest. CMT heterostructures have also the advantage of being almost lattice matched to CdTe and Cd(0.96)Zn(0.04)Te substrates allowing the growth of almost strain free devices. In the present paper we report on room temperature transmission electromodulation in the wavelength range of 1.5µm of multiple quantum well (MQW) CMT heterostructures diodes.

© 1996 IEEE

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