Abstract

Wafer direct bonding is an attractive technique for the integration of different materials The authors have applied this technique to the bonding between III-V compound semiconductors and magneto-optic crystals with the aim of the integration of a laser diode and an optical isolator because it overcomes the issues associated with the lattice mismatch between the two different materials [1,2]. In a previous study, we demonstrated the bonding between InP and several kinds of garnets [3] which are essential to an optical isolator. When the optical isolator is integrated with the laser wafer as shown in Fig. 1, the surface of garnet wafer where a rib waveguide is formed is to be bonded with an etch stop layer for the vertical alignment. In this paper, we report the direct bonding between GalnAsP etch stop layer and Gd₃Ga₅O₁₂ (GGG) which is used as a substrate for magneto-optic crystal growth. The bonding is also described between InP and the garnet rib waveguide.

© 1996 IEEE