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A multilayered semiconductor second-harmonic generator based on a new scheme of phase-matching in a cavity

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Abstract

Our second-harmonic generation (SHG) device based on a new phase-matching scheme is illustrated in Fig. 1. Alternating layers of half-the-harmonic-wavelength (λ2w/2n2w) thick (111)-oriented GaP and AlP are inserted in a cavity. Because of the difference in the magnitude of second-order nonlinear optical coefficient d between GaP and AlP, the nonlinearity is modulated along the longitudinal axis of the cavity as shown by the square wave (n) in the lower part of Fig. 3.

© 1994 IEEE

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