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Enhanced third-order nonlinear susceptibility of semiconductor-doped glass

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Abstract

All-optical switches are generally designed to operate with intensity-dependent refractive index, which results from the third-order nonlinear susceptibility χ(3). In this paper, the real part of χ(3) observed at a signal wavelength λs is examined in CdSxSe1-x-doped glass pumped at λp ≠ λs. It is shown that, comparing to the case of being pumped at λs, which is longer than a band gap wave-length, larger Reχ(3), typically by a factor of 103, is obtained at λs when pumped at the wavelength close to the band edge. The large χ(3) obtained at low absorption wavelength gives us flexibility in designing a variety of all-optical devices.

© 1994 IEEE

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