Automatic surface defects detection on silicon wafers

N. Miron; D. G. Sporea

doi:10.1364/CLEO_EUROPE.1994.CThI51

1994 Conference on Lasers and Electro-Optics Europe
Technical Digest Series (Optica Publishing Group, 1994),
paper CThI51
•https://doi.org/10.1364/CLEO_EUROPE.1994.CThI51

Automatic surface defects detection on silicon wafers

N. Miron and D. G. Sporea

The European Conference on Lasers and Electro-Optics 1994

Amsterdam Netherlands
28 August–2 September 1994
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N. Miron and D. G. Sporea, "Automatic surface defects detection on silicon wafers," in 1994 Conference on Lasers and Electro-Optics Europe, Technical Digest Series (Optica Publishing Group, 1994), paper CThI51.

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Abstract

The detection of surface defects on silicon wafers is done by measuring the total integral scattered flux, when a sharply focused laser beam (<0.1 mm diameter) normal to the wafer surface is used for inspection.

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