Abstract

Er³⁺-doped Y₃A1₅0₁2 (YAG) is an interesting system with several useful laser transitions. Laser operation has previously been demonstrated on the 1.6 μm, 2.94 μm, and 561 nm shown in the level diagram of Fig. 1.^1–3 Co-doping with Yb³⁺ allows these transitions to be pumped on the strong, diode compatible absorptions at 940 and 970 nm. Low-loss YAG waveguides grown by liquid-phase epitaxy have operated as low threshold lasers in Nd³⁺⁴ and Yb³⁺-doped systems. In the present work we have investigated the laser performance at 1.6 μm of Yb,Er codoped YAG epilayers grown on an undoped YAG substrate.

© 1994 IEEE