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Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature

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Abstract

Resonant tunneling diode photodetectors with GaInAsSb absorbers appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We demonstrate how the drift, accumulation and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor’s electrical response.

© 2023 The Author(s)

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