Abstract
(100) oriented silicon and germanium wafers, machined with 10 ps pulses in the NIR (1064 nm), clearly show two ablation regimes when the peak fluence is raised from the threshold to several J/cm2. In the first regime the roughness increases with the fluence due to strong cavity formation whereas the second regime is dominated by the formation of a melt film leading to smooth and flat surfaces. For (110) and (111) oriented wafers this second regime cannot be observed and the surface roughness continuously increases when the fluence is raised. A similar behaviour is observed for all orientations and fs-pulses or burst mode.
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