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Enhanced photon absorption of Ge-on-Si avalanche photodiode with photon-trapping microstructure

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Abstract

Ge-on-Si avalanche photodiodes with photon-trapping microstructure are designed and demonstrated to enhance the optical absorption. The responsivity is enhanced by 9-20% at the wavelength of 1,500-1,550 nm at -6V with the photon-trapping structures.

© 2021 The Author(s)

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