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83% boost in external quantum efficiency of large-area 380 nm flip-chip light-emitting diodes by incorporating a self-textured oxide mask structure

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Abstract

The enhanced output of 380nm flip-chip light-emitting diode is demonstrated by inserting self-textured oxide structures, which was attributed the oxide structure existence not only reduces dislocation density but also intensifies the light extraction. 2012 Optical Society of America

© 2012 Optical Society of America

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