Abstract
Patterned SiO2 and Si3N4 thin film on top of InGaAsP-based epi-layer. Quantum well intermixing had use for lateral bandgap engineering. 85nm wavelength difference has been attained in 1550nm quantum well, showing potential for photonic integration.
© 2022 IEEE
PDF ArticleMore Like This
Chung-Wei Hsiao, Po-Ming Yen, Wei-Cheng Feng, Yang-Jeng Chen, Rih-You Chen, Cong-Long Chen, and Yi-Jen Chiu
JTh2A.66 CLEO: Applications and Technology (CLEO:A&T) 2023
J. Baig, B. Roycroft, J. O’Callaghan, C. Robert, N. Ye, M. Gleeson, A. Gocalinska, E. Pelucchi, P. Townsend, and B. Corbett
SM4R.4 CLEO: Science and Innovations (CLEO:S&I) 2016
Naoki Sekine, Kasidit Toprasertpong, Shinichi Takagi, and Mitsuru Takenaka
STu3O.5 CLEO: Science and Innovations (CLEO:S&I) 2020