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Controlling the Non-Hermitian Graphene Dirac Plasmons and Its Application to Terahertz Laser Transistors

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Abstract

We introduce a new scheme of actively controlling the non-Hermitian Dirac plasmons in a graphene-channel laser transistor structure. Numerical simulation demonstrates the capability of 100-Gbit/s-class ultrafast gain-switching in its plasmonic THz laser operation by electrically modulating the PT symmetry by the applied bias voltages.

© 2022 IEEE

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