Abstract

The influence of ZnTe low-temperatre buffer layer on crystal quality and surface morphology of ZnTe layers grown on (0001) sapphire substrates by metaloganic vapor phase epitaxy was investigated. It was found that both the crystal quality and surface morphology of the ZnTe layers can be improved by introduing the buffer layer with a suitable thichness between the epilayer and the substrate.

© 2009 IEEE

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