Abstract

Photonic band gap (PBG) materials are a new class of dielectrics which represent a major new frontier in quantum, nonlinear, and classical optics. They also represent a new technology platform for the optical networking industry. Unlike semiconductors which facilitate the coherent propagation of electrons, PBG materials execute their novel functions through the coherent localization of photons. When a PBG material is doped with impurity atoms (or other two-level systems) which have an electronic transition that lies within the gap, spontaneous emission of light from the atom is inhibited. Instead, the photon forms a bound state to the atom. This has dramatic consequences for collective light emission from a large number of atoms and for the interaction of such atoms with an external laser field. I describe the design of an all optical micro-transistor based on collective switching of two-level atoms near a photonic band edge, by external laser field. I discuss tunable PBG materials whose band structure can be modulated by means of an external field. This effect enables the steering of light in a manner similar to the steering of electrons by an electric field in a semiconductor.

© 2001 IEEE