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  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper ThC1_3

Stable single-mode 850 nm VCSELs with a higher-order mode absorber formed by shallow Zn diffusion

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Abstract

We report that an 850 nm VCSEL with a planar higher-order mode absorber formed by shallow Zn diffusion (< 0.3 μm deep) operated at stable single- mode. A 5 μm square device showed single-mode emission with a ~ 0.8 mA threshold, a 2.2mW maximum output power, and a mode suppression ratio of 40 dB.

© 2001 IEEE

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