Abstract
We report that an 850 nm VCSEL with a planar higher-order mode absorber formed by shallow Zn diffusion (< 0.3 μm deep) operated at stable single- mode. A 5 μm square device showed single-mode emission with a ~ 0.8 mA threshold, a 2.2mW maximum output power, and a mode suppression ratio of 40 dB.
© 2001 IEEE
PDF ArticleMore Like This
C.C. Chen, S.J. Liaw, Y.J. Yang, Y.C. Yu, and C.Y. Lin
TuW2 Optical Fiber Communication Conference (OFC) 2002
S. Shinada, F. Koyama, N. Nishiyama, M. Arai, and K. Iga
CTuB2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001
G. Dang, W. S. Hobson, L. M. F. Chirovsky, J. Lopata, M. Tayahi, S. N. G. Chu, F. Ren, and S. J. Pearton
CTuB3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001