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Conferences > CLEOPR > 2001 > P1 > P1_81
  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper P1_81

Two-component Photoluminescence Decay and Carrier Localization in InGaN/GaN Multiple Quantum Well Structures

Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang, Chin-Yi Tsai, Yen-Sheng Lin, Chen Hsu, Kung-Jeng Ma, and Jen-Inn Chyi

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Abstract

Localization energies of localized states of InGaN/GaN quantum well structures were obtained by fitting the data of photoluminescence (PL) and amplified spontaneous emission. The two-component decay times in time-resolved PL show consistent results.

© 2001 IEEE

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