Abstract

Vertical-cavity surface-emitting lasers (VCSELs)^1,2 are promising for two-dimensional optical interconnections and information processing. In particular, their single-mode operation makes multiple-wavelength arrays of VCSEL³ and VC-light source⁴ very useful for wavelength division multiplexing (WDM) systems.^5,6 These devices were fabricated monolithically by varying the cavity thickness, and a thickness gradient over a wafer was produced by exploiting the natural nonuniformity of the molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) growth processes.^3,4 When using these processes, however, it is difficult to integrate multiple-wavelength arrays of the desired size at the desired position on the wafer.

© 1995 IEEE