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  • The Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 1995),
  • paper P49

Enhancement of the quantum confined Stark effect and tunneling carrier sweep-out in GaAs/AIGaAs multiple asymmetric quantum well structures

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Abstract

The quantum confined Stark effect (QCSE) in a p-i-n diode is widely used for quantum well devices such as electro-absorption optical modulators. In these devices fast sweep-out of photogenerated carriers is an important point for realizing their high speed operation. Asymmetric quantum wells or asymmetric coupled quantum wells are very attractive structures as for the absorption layers of such devices because of their large excitonic peak shift under low electric field. In this paper we show experimental evidence of enhanced excitonic peak shift and resonantly enhanced carrier sweep- out in multiple asymmetric quantum well (MAQW) structures. We also discuss effects of carrier accumulation in this structure as observed from picosecond photoluminescence spectra.

© 1995 IEEE

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