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Conferences > CLEOPR > 1995 > FP > FP5
  • The Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 1995),
  • paper FP5

Diffraction effects in spatial and spectral properties of THz radiation from ultrashort-pulses-excited GaAs

N. Sarukura, Z. Liu, Y. Segawa, S. Koshihara, K. Shimoyama, Y. Kondo, Y. Shibata, T. Takahashi, S. Hasebe, and M. Ikezawa

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Abstract

The mechanism and application to optoelectronics of THz radiation induced by lasers have been studied intensively.1,2 The mechanism of the THz radiation from semiconductor has been explained by the dipole induced by the surface surge current or optical rectification,3 and this phenomena can be applied as an interface between ultrafast optics and electronics. It is also an attractive light source for studying time-resolved far-infrared spectroscopy. For this purpose, the radiation properties should be known in detail. In this presentation, we will describe spatial and spectral properties of THz radiation from bulk GaAs excited by ultrashort-laser pulses and the diffraction effects.

© 1995 IEEE

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