The feasibility of using femtosecond laser micro-machining to create Gallium Arsenide (GaAs) quasi-phasematched devices from single GaAs wafers is investigated. We describe machining of the structure and details of the machining quality achievable in GaAs.
© 2006 Optical Society of America
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
Login to access OSA Member Subscription