Moving space-charge field effects in GaAs metal-semiconductor field-effect transistors

Chen-Chia Wang; Richard A. Linke; Ian Redmond; Sudhir Trivedi; Sudhir Trivedi

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper CMK8

Moving space-charge field effects in GaAs metal-semiconductor field-effect transistors

Chen-Chia Wang, Richard A. Linke, Ian Redmond, and Sudhir Trivedi

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

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Photorefractive-Based Sensors and imaging (CMK)

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C. Wang, R. A. Linke, I. Redmond, and S. Trivedi, "Moving space-charge field effects in GaAs metal-semiconductor field-effect transistors," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper CMK8.

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Abstract

Moving spate-charge field effects result from the motion of optical interference patterns formed by two interfering optical fields with unequal frequencies.

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