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Conferences > CLEO > 1996 > CWF > CWF58
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CWF58

Large nonbiased optical bistability device in electroabsorption modulator using symmetric two p-i-n-i-p diode structures

O. K. Kwon, K. S. Hyun, K. Kim, E.-H. Lee, X. B. Mei, and C. W. Tu

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Abstract

Electroabsorption modulator based on the quantum-confined Stark effect requires large external bias voltages to induce sufficient electroabsorption effect. The external bias inevitably entails complex metal wiring, and high operating voltage causes an increase in switching energy and large heat dissipation.1'2 Therefore, it would be desirable to establish optical bistable switching without external bias for low switching energy, and layout simplification.

© 1996 Optical Society of America

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