Abstract
Data will be presented characterizing a device structure for the vertical-cavity surface-emitting laser (VCSEL) which has achieved low threshold operation. An advantage of the laser structure is nearly planar processing. In initial results we have achieved a room-temperature continuous-wave threshold current of 225μA in an 8μm square device. To our knowledge, this is the lowest threshold current yet achieved in a vertical-cavity laser. Since the threshold current density is only 350A/cm2, this also represents to our knowledge the lowest threshold current density in a VCSEL of any diameter. The threshold voltage drive is 1.9V, with a drive voltage of 2.9V at four times threshold.
© 1994 Optical Society of America
PDF ArticleMore Like This
R.S. Geels, S.W. Corzine, J.W. Scott, D.B. Young, and L.A. Coldren
PD31 Optical Fiber Communication Conference (OFC) 1990
Y. Hayashi, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, and K. Iga
PD2 Quantum Optoelectronics (QOE) 1995
A. Paraskevopoulos, H. Künzel, J. Sebastian, S. Gramlich, R. Hey, B. Jenichen, and J. Böttcher
CWD2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1994