Femtosecond studies of intervalley scattering in AlxGa1-xAs

M. J. LaGRASSE; W. Z. LIN; B. ZYSSET; JAMES G. FUJIMOTO

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1988),
paper FC2

Femtosecond studies of intervalley scattering in Al_xGa_1-xAs

M. J. LaGRASSE, W. Z. LIN, B. ZYSSET, and JAMES G. FUJIMOTO

Conference on Lasers and Electro-Optics 1988

Anaheim, California United States
25–29 April 1988
ISBN: 1-55752-033-X

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Femtosecond Spectroscopy (FC)

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M. J. LaGRASSE, W. Z. LIN, B. ZYSSET, and J. G. FUJIMOTO, "Femtosecond studies of intervalley scattering in AlxGa1-xAs," in Conference on Lasers and Electro-Optics, D. Pinnow and P. Moulton, eds., Vol. 7 of OSA Technical Digest (Optica Publishing Group, 1988), paper FC2.

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Abstract

Excited carrier dynamics in GaAs and AIGaAs directly affect the characteristics and performance of optical and electronic devices fabricated from these materials. Previous investigators have examined intervalley scattering using pump-probe, transient mobility, and luminescence measurements.^1-3 We describe femtosecond pump-probe studies of excited carrier dynamics in Al_xGa_1-xAs using a tunable laser system.

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